Abstract
A defect in electron-irradiated p-type Si grown in H 2 has been investigated with deep level transient spectroscopy (DLTS). We show that it is hydrogen-related and has a single donor level located near the middle of the gap. Some special properties of this level are presented. A modified method is suggested to determine the position of this level, which indicates that if the electron emission rate e n of a deep level is not far from the hole emission rate e p, the conventional energy level calculation in DLTS experiment should be modified.
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