Abstract
In this paper, a III-V/Silicon hybrid single mode laser operating at a long wavelength for photonic integration circuit is presented. The InGaAlAs gain structure is bonded onto a patterned silicon-on insulator wafer directly. The novel mode selected mechanism based on a slotted silicon waveguide is applied, which only need standard photolithography in the whole technological process. The side mode suppression ratio of larger than 20dB is obtained from experiments.
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