Abstract
We report electrical measurements of a single arsenic dopant atom in the tunnel barrier of a silicon single-electron transistor (SET). In addition to performing the electrical characterization of the individual dopant, we study the series electrical transport through the dopant and SET. We measure the triple points of this hybrid double-dot, using simulations to support our results, and show that we can tune the electrostatic coupling between the two sub-systems.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
