Abstract
In this paper, a hybrid CMOS inverter employing In-Ga-Zn oxide (IGZO) (inorganic, n-channel) and P3HT (organic, p-channel) thin film transistors (TFTs) is reported. Both inorganic and organic TFTs are fabricated by ink-jet printing technology. The field effect mobility of p and n channel TFTs are 0.0038 and 0.27 cm<sup>2</sup>/V s, respectively. The inverter exhibited an obvious inverter response for switching between logic ‘1’ and logic ‘0’, and yielded a high gain of 14 at V<sub>DD</sub> = 30 V. With the combining advantages of oxide semiconductor (n-type, high mobility) and organic (commonly p-type), it is promising to construct powerful functional CMOS circuits, such as ring oscillator and shift registers.
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