Abstract
We report a waveguide photodetector utilizing a hybrid waveguide structure consisting of AlGaInAs quantum wells bonded to a silicon waveguide. The light in the hybrid waveguide is absorbed by the AlGaInAs quantum wells under reverse bias. The photodetector has a fiber coupled responsivity of 0.31 A/W with an internal quantum efficiency of 90 % over the 1.5 mum wavelength range. This photodetector structure can be integrated with silicon evanescent lasers for power monitors or integrated with silicon evanescent amplifiers for preamplified receivers.
Highlights
Silicon is an important optical material because it is transparent at the 1.3 and 1.55 μm telecommunication wavelengths and because of the maturity of silicon processing in the CMOS electronics industry, resulting in potentially low cost and large scale manufacturing capability
We report a waveguide photodetector utilizing a hybrid waveguide structure consisting of AlGaInAs quantum wells bonded to a silicon waveguide
The light in the hybrid waveguide is absorbed by the AlGaInAs quantum wells under reverse bias
Summary
Silicon is an important optical material because it is transparent at the 1.3 and 1.55 μm telecommunication wavelengths and because of the maturity of silicon processing in the CMOS electronics industry, resulting in potentially low cost and large scale manufacturing capability. A silicon waveguide photodetector has been demonstrated using implantation to increase photoresponse beyond 1100 nm [11] These developments are promising due to their processing compatibility with standard CMOS materials. Their dark current densities are typically higher than conventional III-V photodetectors primarily due to dislocations from the growth on a silicon substrate. Their absorption is typically lower at wavelengths beyond 1550 nm, leading to lower responsivity at longer wavelengths. We demonstrated lasers [12], and amplifiers [13] on the hybrid silicon evanescent active device platform. The device operates with a responsivity of 1.1 A/W, a quantum efficiency of 90 % covering a wavelength range up to 1600 nm, and dark current of less than 100 nA at a reverse bias of 2 V
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