Abstract
As the efficiency of perovskite/Si tandem solar cells (PVSK/Si TSCs) surpasses the practical limit of single-junction cells, consideration of device stability is critical for real-world application. Demonstrated recently, potential-induced degradation (PID) and partial recovery can occur in PVSK/Si TSCs depending on the external potential, indicating that the hitherto underresearched PID issues must be addressed for successful commercialization.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
