A high-speed P-N-P alloy-diffused drift transistor for switching applications

Abstract

High-speed p-n-p drift transistors designed for switching applications have been made by the formation of the base region by diffusion from the alloy emitter. Transistors made in this manner are characterized by high speed, close control of frequency response, and high current amplification. Typical characteristics are: 1) frequency cutoffs--200 mc; 2) collector-to-base current amplification factor--300; 3) reverse collector breakdown--50 volts; and 4) reverse emitter breakdown--5 volts.