A high-speed frequency divider using n+-Ge Gate AlGaAs/GaAs MISFET's

Abstract

A high-speed divide-by-four static frequency divider is fabricated using n+ -Ge gate AlGaAs/GaAs heterostructure MISFET's. The divider circuit consists of two master-slave T-type flip-flops (T-FF's) and an output buffer based on source-coupled FET logic (SCFL). A maximum toggle frequency of 11.3 GHz with a power dissipation of 219 mW per T-F/F is obtained at 300 K using 1.0-µm gate FET's.