Abstract
A new highly sensitive photoconductor in a near-infrared wavelength region with a low dark decay has been developed for an electrophotographic device. The photoconductor has been created with a multilayered Se-As-Te chalcogenide glass. The structure of the photoconductive layer consists of four parts: (a) Se-rich blocking layer, (b) Te-rich IR-sensitive layer, (c) As-rich space-charge layer, and (d) Se-rich voltage sustaining layer. A Cerium oxide layer is interposed as a carrier blocking layer on the substrate. This photoconductor has shown sensitivity of about 300 m2/J to beams having a wavelength of 750 nm. This sensitivity is as high as that of the amorphous Se photoconductor to light having a wavelength of 442 nm. This photoconductor has favorable characteristics such as a high initial surface potential, low dark decay, low residual surface potential, and long durability in practical use. It is suitable for a photoconductor in a laser beam printer with a diode laser.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
