Abstract
A highly integrated SiGe BiCMOS PA is presented that enables the emerging high throughput 802.11ac WLAN applications. The PA has two stages for the g-band and three stages for the a-band PA, and integrates matching circuitry, out of band rejection filters, power detectors, and bias controls in a 1.5 ×1.6 mm chip. The g-band PA achieves 28 dB gain with 2% EVM at 18 dBm and 3% at 19.5 dBm output power. The a-band PA achieves 32 dB gain with 2% EVM at 18 dBm and 3% EVM at 19 dBm output power. The design is verified meeting not only the regulatory out-of-band emission requirements but also the linearity requirement of the emerging 256 QAM 802.11ac standard.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
