A Highly Efficient X-Band Inverse Class-F SiGe HBT Cascode Power Amplifier With Harmonic-Tuned Wilkinson Power Combiner

Abstract

A highly efficient sub-Watt X-band inverse class-F SiGe heterojunction bipolar transistor (HBT) cascode power amplifier (PA) is presented. With a multi-harmonic resonance filter and a low loss lumped-element Wilkinson power combiner as an output matching network, the inverse class-F operation is realized successfully and high output power and power added efficiency (PAE) are obtained simultaneously. A cascode configuration with a low base impedance termination and reduced voltage–current waveform overlap extends ${V} _{\rm{CE}}$ swing of the upper SiGe HBT in the cascode beyond BVCBO, leading to improvement in output power and PAE. As proof of concept, the proposed PA was implemented in a 0.13- ${{\mu }}\text{m}$ SiGe BiCMOS technology platform. Measured results shows 53.4% peak PAE with 26.1 dBm output power at 10 GHz, when operated on a 3.0-V supply. No performance degradation is observed after 24-h continuous mode operation. To the author’s best knowledge, this brief has the highest PAE among any Si-based X-band PAs with comparable output power, which demonstrates that the proposed harmonic-tuned Wilkinson power combiner approach is an appropriate solution for efficient PA design at X-band.