Abstract
A new 2.45 GHz microwave ion source has been developed for high-current ion implantation. The source uses permanent magnets to generate the ECR magnetic field. This leads to a much simpler and more compact design than typical solenoidal field microwave sources. The strong magnetic field and high-microwave power density are used to achieve a 11B+ ion fraction of up to 30% in extracted boron beams. Previous work on microwave ion sources for ion implantation has ordinarily not dealt with performance or lifetime issues for boron operation, which are critical in evaluating the overall utility of an implanter ion source. This is due to the generally poor performance of microwave sources with boron, as well as the limited source lifetime. Details of the performance and lifetime characteristics of this source with BF3 are presented in this paper.
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