Abstract
In this letter, a high-current kink effect free Z-gate polycrystalline silicon (poly-Si) thin-film transistor (ZG-TFT) is proposed and demonstrated. The ZG-TFT, which is formed by a raised source/drain (RSD) region and a split channel (SC) structure, reveals better device performance. Our experimental results show that the ON-current of ZG-TFT is about two times higher than that of a conventional single top gate TFT, and the leakage current is greatly reduced simultaneously. In addition, the high drain electric field is considerably reduced by the RSD structure, and the SC design can further effectively suppress the kink effect. Therefore, a better ON/OFF current ratio and a higher drain breakdown voltage can be achieved.
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