Abstract
A monolithic pixel sensor test chip for the PANDA micro-vertex detector has been implemented in a 180 nm HVCMOS technology on a high resistivity substrate. The sensor should have very high time resolution (1 ns sigma) and high dynamic range (up to 1000). The pixel electronics contains a charge sensitive amplifier, a feedback circuit and two comparators. One comparator receives the fast signal and enables accurate time measurement. The other comparator receives the low pass filtered signal and is used for precise amplitude measurement. This publication presents several novel features of the PANDA ASIC, its characterization and several measurement results.
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