Abstract
A combined method of implantation of Pt+ and subsequent deposition of a Pt film from pulsed-laser plasma was used to form gas-sensitive structures on n-6H-SiC monocrystals. High-temperature implantation ensures formation of a layer that improves adhesion of the film to the substrate and varies the current flow parameters due to the effect of atomic hydrogen, which appears during the reaction between H2 and catalytically active Pt. Breakage of the Pt film at elevated detector-operating temperatures (∼500°C) has no pronounced negative effect on the sensor properties of the Pt/Pt+/SiC structure. Similar effects in the traditionally used Pt/SiC diode structure lead to severe degradation of its characteristics.
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