A high-temperature attachment for precise measurement of lattice parameters by Bond's method between room temperature and 1500K

Abstract

A new type of high-temperature attachment was constructed to make precise measurements by Bond's method on lattice parameters of relatively large single crystals. This attachment is capable of tilting and traversing of a single crystal specimen in a vacuum or inert gas atmosphere in the outer metal cover at any time during the operation of the furnace. Special attention was given to the exact determination of specimen temperature in a wide range from room temperature up to 1500K. The temperature is kept constant to within +or-0.5K during measurement in the above range. The accuracy of specimen temperature determination is +or-1.6K at 1000K and +or-2.3K at 1500K. With a nearly perfect single Si crystal lattice parameters were measured at room temperature, 1300 and 1400K to a few parts of per million.