Abstract
This paper presents a 1V low-voltage high speed frequency divider-by-2 which is fabricated in a standard 0.18μm TSMC RF CMOS process. Employing parallel current switching topology, the 2:1 frequency divider operates up to 6.5GHz while consuming 4.64mA current with test buffers at a supply voltage of 1V, and the chip area of the core circuit is 0.065×0.055mm2.
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