Abstract
This paper reports a high speed buried channel MOSFET dielectrically, isolated from the substrate by using oxygen implantation technology. An implanted silicon dioxide layer is formed just beneath the surface. An n-type epitaxial layer is grown on the remaining thin single-crystal layer at the surface. Then, buried channel MOSFETs were formed on the n-type layer. MOSFETs with various channel lengths were fabricated. Sub-micron MOSFETs have shown much smaller threshold voltage shift, compared conventional ones, which agrees with the result of the two-dimensional numerical calculation. The ring-oscillator composed of MOSFETs with 1 µm channel length has shown a minimum delay time of 95 ps and power delay product of 310 fJ at V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</inf> of 15 V.
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