Abstract
To improve the current non-linear optically coupled isolation amplifier and high power consumption, we designed a low-power, high-speed and high-linearity BiCMOS optically isolation amplifier. There are only two push-pull output stages configuration bipolar transistor (BJT) in the design process, the rest of the circuit is the CMOS device. To improve amplifier gain linearity and stability, we introduce the complementary symmetrical photodiode, in the optically coupled part and every amplifier, negative feedback is introduced. Experimental results indicate that the design of optically isolation amplifier ± 3 dB bandwidth increases 40 kHz than optically isolation amplifier ISO100 bipolar, When the power supply voltage is 4.8 V, the delay - power product of DP is lower than ISO100 37.3 pJ, gain linearity is up to 5.5 × 10-5, which is suitable for high-speed control system.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
