Abstract
An infrared (IR) sensor with the lead-titanate (PbTiO/sub 3/) thin-film using the technology of micro-electromechanical system to achieve a better thermal isolation structure has been fabricated and developed, The major IR-sensing part on the cantilever beam with dimensions of 200/spl times/100/spl times/2 /spl mu/m/sup 3/ consists of a 500 /spl Aring/ PbTiO/sub 3/ layer deposited by RF sputtering, and an evaporated bismuth (Bi) layer. This thermal isolation improved structure exhibits a much superior performance to that of a traditional IR-sensing bulk structure on the experimental results, which show a 200% and 300% improvement in current gain under the incident optical power 500 /spl mu/W and 6 V applied bias at room temperature and 77 K, respectively,.
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