Abstract
A high-performance p-GaN/NiO nanostructures/n-GaN ultraviolet (UV) sandwich structure photodetector was fabricated that was composed of NiO nanostructures grown on n-GaN and a p-GaN film layer. The device based on the GaN p-GaN/NiO nanostructures/n-GaN sandwich structure showed a high responsivity and fast response. This study provides a method to fabricate high-response UV photodetectors for GaN-based materials by combining them with metal oxide nanostructures.
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