Abstract
We have studied the Si-SiO2 interface of a Si-MOSFET (metal-oxide-semiconductor field-effect transistor) on a (911) surface by high-resolution electron microscopy. The interface was viewed edge-on parallel to [011̄] and the Si crystal lattice was directly resolved. The image shows the interface to be smooth to within 4 Å and contains a possible indication of a transition layer (∼10 Å) of nonstoichiometric oxides.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
