Abstract
A new via technology for improving electromigration (EM) reliability of copper (Cu) dual-damascene (DD) interconnection has been developed. Early failure mode of a conventional Cu DD structure is found as void formation at the via-bottom interface, where flux divergence of Cu ions is large due to diffusion barrier-layer. In order to avoid the early failures, direct-contact via (DCV) technology whose concept is “barrier-free” at the via-bottom has been developed. The early failure mode is eliminated by the DCV technology and lower via resistance is obtained.
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