Abstract
Nanocrystalline p–n junction diodes have been fabricated by using the metal-induced lateral crystallization (MILC) method, in which the Ni films were used to induce amorphous silicon into nanocrystalline. The effects of various thicknesses of Ni films on the material and electrical properties of the p–n junction diodes have been studied in detail. We found that the MILC films induced by 20 nm thick Ni exhibited the best crystallization, with an average grain size of 43.2 nm. The nanocrystalline p–n junction diodes prepared by this process demonstrated a low turn-on voltage of 0.44 V and a very high rectification ratio of 5469 at a bias voltage. Thus, our developed p–n junction diodes are applicable in a solar cell. The current mechanism was dominated by the diffusion and recombination as a result of defect centers, caused by Ni-silicides, existing at the interface of the p–n junction diodes.
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