Abstract
AbstractA high‐power monolithic microwave integrated circuit voltage controlled oscillator (MMIC VCO) that can drive optical devices such as an electro‐absorption and an electro‐optic modulators is presented. A common‐gate metamorphic HEMT (MHEMT) with 0.2 mm of gate width in conjunction with inductive feedback was used to generate negative resistance. The low‐loss coplanar waveguide transmission line on the 650 μm‐thick metamorphic GaAs substrate was utilized to minimize loss. The maximum generated output power of the MHEMT VCO was 40.1 mW at 24.1 GHz when biased at Vds = 3.8 V and Vgs = −0.44 V. Phase noise and frequency tuning range were estimated to be −93.4 dBc/Hz at 1 M Hz offset and 1 GHz, respectively. Experimental results show great promise for the MHEMT MMIC VCO to be used in future high‐power microwave source applications especially for driving optical devices. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2221–2224, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22702
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