Abstract
This paper proposed the high-frequency, multi-harmonic-controlled, Class-F power amplifier (PA) implemented with 0.5 μm GaN Hetrojunction Electron Mobility Transistor (HEMT). For PA design at high frequencies, parasitics of a transistor significantly increase the difficulty of harmonic manipulation, compared to low-frequency cases. To overcome this issue, we propose a novel design methodology based on a band-reject, low-pass, output matching network, which is realized with passive components. This network provides optimal fundamental impedance and allows harmonic control up to the third order to enable an efficient Class-F behavior. The implemented PA exhibits performance at 2.5 GHz with a 50% PAE, 14 dB gain, and 10 W output power.
Highlights
In modern wireless communication systems, RF power amplifiers (PAs) are one of the most important part of the transmitters
A λ/4 microstrip lines were used which operating frequency ω0 as Figure 1 shown. This schematic allows the odd-order harmonic signals are retained in the drain terminal, and even order harmonics signals were shorted to ground, and this design allows the drain terminal of the voltage waveform is adjusted to a square wave, avoid Vmax impact caused by too much
The principle of class-F power amplifier is retained by an infinite number of odd-order harmonics signal waveform reshape using to produce the desired square-wave to improve the drain terminal of the voltage waveform, that if you do not use the microstrip line to achieve this result, there are other ways to solve
Summary
In modern wireless communication systems, RF power amplifiers (PAs) are one of the most important part of the transmitters. A λ/4 microstrip lines were used which operating frequency ω0 as Figure 1 shown. This schematic allows the odd-order harmonic signals are retained in the drain terminal, and even order harmonics signals were shorted to ground, and this design allows the drain terminal of the voltage waveform is adjusted to a square wave, avoid Vmax impact caused by too much. The principle of class-F power amplifier is retained by an infinite number of odd-order harmonics signal waveform reshape using to produce the desired square-wave to improve the drain terminal of the voltage waveform, that if you do not use the microstrip line to achieve this result, there are other ways to solve. More than the increase in the output of 5ω0 even 7ω0 resonant circuit, will contribute to better performance characteristics of the class-F power amplifier
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