Abstract
A Schottky barrier diode with low-barrier is presented, based on which a terahertz waveguide detector working at 500–600 GHz is designed and fabricated. By using the InGaAs/InP material system, the feature of the low barrier is obtained which greatly improves the performance of the detector. The measured typical voltage responsivity is about 900 V/W at 500–560 GHz and is about 400 V/W at 560–600 GHz. The proposed broadband waveguide detector has the characteristics of simple structure, compact size, low cost and high performance, and can be used in a variety of applications such as imaging, molecular spectroscopy and atmospheric remote sensing.
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