A high performance MOSFET on selective buried oxide with improved short channel effects

Abstract

The era of bulk MOSFET is probably nearing its end. The continuation of scaling of bulk MOSFET in nanometer range (<65 nm) has become extremely difficult as the performance of bulk MOSFET is severely degraded by short channel effects (SCE). In such a scenario, the thin film SOI based MOSFET looks set to become the next driver for CMOS scaling [1]. However, the main problem associated with the SOI technology is self-heating, low breakdown voltage, floating body effect (in partially depleted SOI) etc. The self-heating manifests its effects in terms of degradation in reliability and in over all performance of the device [2]. These problems have been considerably reduced in devices using silicon on partial buried oxide, such as, selective buried oxide (SELBOX) devices [3–5]. Although SELBOX based MOS devices are thermally efficient and are more reliable than SOI based devices, however, the magnitude of SCEs is significantly higher in the SELBOX device [5].