Abstract
Metal-insulator-metal (MIM) capacitors with a 56 nm thick HfO/sub 2/ high-/spl kappa/ dielectric film have been fabricated and demonstrated for the first of time with a low thermal budget (/spl sim/200/spl deg/C). Voltage linearity, temperature coefficients of capacitance, and electrical properties are all characterized. The results show that the HfO/sub 2/ MIM capacitor can provide a higher capacitance density than Si/sub 3/N/sub 4/ MIM capacitor while still maintaining comparable voltage and temperature coefficients of capacitance. In addition, a low leakage current of 2/spl times/10/sup -9/ A/cm/sup 2/ at 3 V is achieved. All of these make the HfO/sub 2/ MIM capacitor to be very suitable for use in silicon RF and mixed signal IC applications.
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