A high-performance infrared photoacoustic sensor with improved low-frequency response microphone

Abstract

Infrared photoacoustic gas sensors with the advantages of good selectivity, low interference, fast response speed, good stability, high accuracy, good explosion-proof performance, high signal-to-noise ratio, and long service life, have developed rapidly in recent years. In order to solve the problem of poor low-frequency response performance of the MEMS piezoelectric thin film microphone sensor prepared with AlN and Mo thin films in infrared photoacoustic gas sensors, this article analyzes its principle and tests an improved solution. The internal stress distribution was changed through hot tempering experiments, significantly improving its structure. The article qualitatively and quantitatively analyzes the inherent mechanism of this phenomenon. The experimental results confirm that the improved scheme improves its response performance under low-frequency signals, with good stability and repeatability.