Abstract
The gate drive discussed achieves extremely fast turn-on times due to a current pulse applied to the gate. The gate/base current rise time is only a function of the turn-off time of a MOSFET, resulting in extremely fast rise times. The fundamental limits of the new drive are pointed out, including minimum off-time and maximum on-time. A loss analysis is also carried out. Experimental results verify the performance of the gate drive.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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