A high-performance five-channel NMOSFET using selective epitaxial growth and lateral solid phase epitaxy

M Kumar,J.K.O Sin,Haitao Liu Haitao Liu

doi:10.1109/55.998870

A high-performance five-channel NMOSFET using selective epitaxial growth and lateral solid phase epitaxy

M Kumar, J.K.O Sin + Show 1 more

https://doi.org/10.1109/55.998870

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Journal: IEEE Electron Device Letters	Publication Date: May 1, 2002
Citations: 9

Affiliation: Hong Kong University of Science and Technology, University of Hong Kong, IBM (United States)

#Lateral Solid Phase Epitaxy #Selective Epitaxial Growth + Show 8 more

Abstract
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Abstract

In this letter, a novel five-channel NMOSFET (FC-NMOS) using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE) is reported. The FC-NMOS is an integration of a conventional bulk NMOS, two vertical NMOS, and a gate-all-around NMOS. The top silicon layer for implementing the gate-all-around structure is obtained by using the LSPE with the SEG pillar as the silicon seed. The FC-NMOS has a 3.6/spl times/ higher current drive as compared to the conventional bulk NMOS. This makes the FC-NMOS very promising for VLSI/ULSI applications.

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