Abstract
In this paper a new high voltage, high performance, high packing density, silicon complementary bipolar technology on novel low thermal resistance compound buried layer (CBL) SOI is reported. NPN and Vertical PNP devices have been fabricated with matched DC and AC characteristics, cut-off frequencies of 3 GHz and breakdowns greater than 36 Volts. The thermal resistance and substrate capacitance of the fabricated devices confirms the superior performance of the CBL SOI substrates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
