Abstract
One of the most important applications of photodetectors is as sensing units in imaging systems. In practical applications, a photodetector array with high uniformity and high performance is an indispensable part of the imaging system. Herein, a photodetector array (5 × 4) consisting of 20 photodetector units, in which the photosensitive layer involves preprocessing commercial ε-Ga2O3 films with high temperature annealing, have been constructed by low-cost magnetron sputtering and mask processes. The ε-Ga2O3 ultraviolet photodetector unit shows excellent responsivity and detectivity of 6.18 A/W and 5 × 1013 Jones, respectively, an ultra-high light-to-dark ratio of 1.45 × 105, and a fast photoresponse speed (0.14/0.09 s). At the same time, the device also shows good solar-blind characteristics and stability. Based on this, we demonstrate an ε-Ga2O3-thin-film-based solar-blind ultraviolet detector array with high uniformity and high performance for solar-blind imaging in optoelectronic integration applications.
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