Abstract
AbstractA hole bilayer in a strained germanium double quantum well is designed, fabricated, and studied. Magnetotransport characterization of double quantum well field‐effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of and a low percolation density of . The individual population of the channels from the interference patterns of the Landau fan diagram was resolved. At a density of the system is in resonance and an anti‐crossing of the first two bilayer subbands is observed and a symmetric‐antisymmetric gap of is estimated, in agreement with Schrödinger‐Poisson simulations.
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