A high-mobility electronic system at an electrolyte-gated oxide surface.

Patrick Gallagher,David Goldhaber-Gordon,Trevor A Petach,Sam W Stanwyck,Takashi Taniguchi,James R Williams,Menyoung Lee,Kenji Watanabe

doi:10.1038/ncomms7437

Patrick Gallagher, David Goldhaber-Gordon + Show 6 more

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https://doi.org/10.1038/ncomms7437

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Abstract

Electrolyte gating is a powerful technique for accumulating large carrier densities at a surface. Yet this approach suffers from significant sources of disorder: electrochemical reactions can damage or alter the sample, and the ions of the electrolyte and various dissolved contaminants sit Angstroms from the electron system. Accordingly, electrolyte gating is well suited to studies of superconductivity and other phenomena robust to disorder, but of limited use when reactions or disorder must be avoided. Here we demonstrate that these limitations can be overcome by protecting the sample with a chemically inert, atomically smooth sheet of hexagonal boron nitride. We illustrate our technique with electrolyte-gated strontium titanate, whose mobility when protected with boron nitride improves more than 10-fold while achieving carrier densities nearing 1014 cm−2. Our technique is portable to other materials, and should enable future studies where high carrier density modulation is required but electrochemical reactions and surface disorder must be minimized.

Highlights

Electrolyte gating is a powerful technique for accumulating large carrier densities at a surface
Each of our samples consists of a single crystal of strontium titanate (STO) partially covered by an atomically flat boron nitride (BN) flake (Fig. 1a)
The BN flake conforms to the substrate without trapping contaminants, as evidenced by the 0.4 nm terrace steps of the underlying STO seen in the topography of the BN (Fig. 1b)

Summary

Introduction

Electrolyte gating is a powerful technique for accumulating large carrier densities at a surface This approach suffers from significant sources of disorder: electrochemical reactions can damage or alter the sample, and the ions of the electrolyte and various dissolved contaminants sit Angstroms from the electron system. Recent studies have further suggested that chemical modification of the surface of interest, rather than electrostatics, is primarily responsible for the marked changes in electronic properties in some electrolyte-gated systems[10,11,12] Motivated by these challenges, we consider the well-studied two-dimensional electron system (2DES) created by electrolyte gating at the surface of strontium titanate (STO)[13,14,15,16,17,18,19]. We demonstrate that by protecting the STO channel with a thin boron nitride (BN) dielectric impermeable to the ions of the electrolyte[21], the mobility of the resulting electrolyte-gated 2DES substantially increases over a wide density range, surpassing 12,000 cm[2] V À 1 s À 1 at a density of 4 Â 1013 cm À 2 in our best sample

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Conclusion