Abstract
Bipolar power transistors with a high-low emitter profile were fabricated and their electrical characteristics were investigated. The maximum do current gain of these high-low emitter transistors is in the range of 600 to 700 at a collector current of 600 :mA to 700 mA. This is attributed to the minority carrier reflection of the high-low emitter junction and enhanced material properties of the epitaxial base and lightly-doped emitter. The low base current activation energy (0.9 eV) is attributed to n + emitter band-gap shrinkage and minority carrier reflection of the high-low emitter junction. These transistors also have a smaller percentage increase in maximum do current gain with increasing temperature than do conventional bipolar power transistors.
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