Abstract
In this paper a modified derivation (MD) wideband common-gate low-noise amplifier (CGLNA) is described, with a noise figure (NF) based on Global Foundries and enhanced linearity and frequency response. It is reported that 0.13-µm CMOS technology. The design Combined with folded cascode with gain boosting LNA and common source stage of conventional split inductor stage. At a frequency of 4 GHz, the LNA circuit achieves a high gain of 22.11 dB with an input return loss of -24.86 dB and a flat NF of 0.3 dB. The linearity parameter IIP3 and 1 dB compression are improved -15.62 dBm and -22.69 dBm.
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