Abstract
In this study, we described an atomic layer deposition (ALD) process for the preparation of nanoscale nickel oxide (NiO) films with high growth rate by using a combination of nickel(II) diketonate–diamine (Ni(acac)2(TMEDA), TMEDA = N,N,N′,N′-tetramethyl-ethylenediamine) and ozone (O3). Typical self-limiting film growth behavior was observed between 200 and 275 °C, and growth saturation with respect to both precursor pulse time was verified. The chemical composition, crystalline phase, and surface morphology of the films were studied using X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy. All the results confirmed that the ALD process occurred with high growth rate of approximately 2.0 Å/cycle and resulted in high-quality, smooth films.
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