Abstract
We report a complementary metal oxide semiconductor (CMOS) inverter made of p-type low-temperature poly-Si (LTPS) thin-film transistor (TFT) using blue laser annealing of amorphous Si and an n-type amorphous indium-gallium-zinc oxide (a-IGZO) TFT. The LTPS TFT exhibits a field-effect mobility, threshold voltage, and subthreshold swing of 81.76 cm2/Vs, −1.1 V, and 0.65 V/dec, respectively, and the a-IGZO TFT exhibits 13.52 cm2/Vs, 1.2 V and 0.25 V/dec, respectively. The CMOS inverter shows a full swing and a high gain of 114.28 V/V and a wide noise margin with rising and falling times of 1.44 and $3.52~\mu \text{s}$ , respectively.
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