Abstract
A high-frequency high voltage gain discontinuous conduction mode coupled-inductor boost LED driver based on planar component is presented in this paper. GaN switch is adopted with lower conducting resistance and higher switching speed. Zero voltage switching (ZVS) is achieved at the same time to reduce high switching loss caused by high switching frequency. Compared with the previous work, the voltage gain is higher and efficiency is higher because of ZVS. This paper focuses on high efficiency; therefore, resonant gate driver is adopted and efficiency is increased by 0.6%. In terms of the coupled-inductor, planar component is used and parameter optimization is also proposed to realize lower loss, including wingding loss and fringing loss caused by the air gap. A 500 kHz 36 W prototype has been designed to demonstrate theoretical analysis. In addition, comparison of drive loss between the resonant gate driver used in this paper and conventional driver implemented by Si8271 is made, revealing advantages of the resonant driver. Obtained efficiency was up to 92.1% at full load.
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