A High-Frequency Compact Model for Graphene Resonant Channel Transistors Including Mechanical Nonlinear Effects

Abstract

This paper presents a physical-based high-frequency nonlinear model of graphene resonant channel transistors (G-RCTs), including a nonlinear electromechanical model of doubled clamped graphene mechanical resonators. To accurately describe the temperature-dependent modal dispersion, both bias- and temperature-dependent effects are considered. The temperature-dependent built-in strain, the bias-based electrostatic force, and the spring restoring force, including the nonlinear term upon deformation, are used to describe the mechanical motion of the suspended beam. The nonlinear model is validated by the measured results of G-RCTs, which indicate that our model can predict the experimental results well. Moreover, the nonlinear effects, including harmonic distortion, third-order intermodulation distortion, and the hysteresis and nonlinear behavior of G-RCTs, are also studied. The results show that the nonlinear physical model can predict the response of G-RCTs very well. These results also show that the mechanical nonlinearity has strong effects on nonlinear distortion for G-RCTs. The nonlinear equivalent circuit model could be useful for nanoelectromechanical system in the applications of high-frequency integrated circuits.