Abstract
This research is focused on a new type of three junction high efficiency solar cell incorporating the promising Si-Ge material as the bottom layer. As a proof of concept, the proposed solar cell has been configured with high quality material of bandgaps 1.9 eV GaInP2 and 1.42 eV GaAs as top and middle subcells and 0.838 eV bandgap new semiconductor material Si0.38Ge0.62 as bottom subcell. The chosen materials for this configuration are lattice matched (5.66 A) and this matching is beneficial for optical transparency and current conductivity. The short circuit current density (Jsc), reverse saturation current density (J0), open circuit voltage (Voc), voltage (Vm) and current density (Jm) at maximum power point, fill factor (FF) and the photoconversion efficiency (η) for the proposed multijunction solar cell (MJSC) have been determined by using the standard solar cell equations of modified spectral p-n junction model and MATLAB in-house code. The ASTM G173-03 reference spectra have been utilized for the quantitative analysis at airmass AM1.5G global irradiance condition. The conversion efficiency of the GaInP2/GaAs/Si0.38Ge0.62 solar cell has been simulated as 47.1% at AM1.5G under normal sun (1 sun) concentration and 56.4% under 1000 suns concentration.
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