Abstract
High efficiency indium phosphide transferred-electron pulsed devices have been shown to produce simultaneously high peak-powers and high mean-powers with d.c. to r.f. conversion efficiencies up to 22% at upper J-band frequencies. Single devices have produced 16W peak power at low duty-cycle and up to 0.8W mean power (10W peak) at higher duty-cycle. Four-diode waveguide arrays have been constructed using these devices and 64.5W peak power demonstrated at 0.1% duty cycle in addition to 2W mean power at 5% duty cycle. Comparisons are made with the high efficiency GaAs Read Impatt, and important operational differences highlighted. Finally, the maximum peak power and mean power potential of both these devices is discussed and the most suitable applications for each are indicated.
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