Abstract

A high efficiency GaN Power Amplifier (PA) is designed here. After the load traction and source traction, the optimal load-pull and source-pull of this PA are 7.810+j*8.636 Ohm and 23.069+j*3.225 Ohm, respectively. Through the method of Harmonic Control, the maximum drain efficiency (DE) reaches 78.6%. The simulation results show that the output power (Pout) and Gain in 0.5-2.5 GHz are 40 ± 0.5 dBm and 15 ± 0.5 dB, respectively, the power added efficiency (PAE) is 65.2%. Comparing with other GaN PAs with the same frequency, the PA has obvious advantages with high efficiency.

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