Abstract
In this brief, a novel double-side silicon-embedded coreless inductor is proposed and demonstrated for integrated dc-dc converter applications. The inductor has double-side thick windings embedded into the silicon substrate and connected in parallel. Extremely large effective metal thickness of 300 μm can, therefore, be achieved. Consequently, the 0.8 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> inductor fabricated shows a low dc resistance of 42 mΩ. A large inductance to dc resistance ratio of 0.4 nH/ mΩ is then achieved with an inductance over 16.1 nH. The calculated peak effective inductor efficiency is 96.1% for 1.8-0.85 V, 100 MHz dc-dc conversion.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
