Abstract
This paper presents a performance investigation and design optimization of a high efficiency three-level Active Neutral Point Clamped (ANPC) inverter topology using hybrid Si/SiC switches. It uses a modulation strategy that produces a cluster of low frequency switches commutating at fundamental line frequency (realized with Si IGBTs) and high frequency switches commutating at carrier frequency (realized with hybrid Si/SiC switches) to facilitate a tradeoff between the inverter efficiency and cost. A generalized Si/SiC current rating ratio optimization algorithm is presented for the hybrid Si/SiC switches based on the power loss profile of ANPC inverter. This algorithm determines the optimal current rating ratio between the Si IGBT and SiC MOSFET for the hybrid Si/SiC switches based on the inverter operating specification and Si/SiC gate control technique to achieve the best tradeoff between cost, loss and reliability. The performance of the proposed ANPC inverter system is investigated and compared with other similar ANPC inverter systems. The proposed ANPC inverter system achieves higher efficiency compared to an all Si IGBT based ANPC inverter system, all SiC MOSFET based ANPC inverter system, and other ANPC inverter systems consisting mixed Si IGBT and SiC MOSFET devices. On the other hand, the semiconductor device cost of the proposed ANPC inverter system is much lower than an all SiC MOSFET based ANPC inverter system and the mixed Si IGBT and SiC MOSFET based ANPC inverter systems while it is on par with an all Si IGBT based ANPC inverter system.
Highlights
The renewable energy market based on photovoltaic (PV) energy is rapidly growing [1], [2] and PV generation plants with MW-scale power capability are becoming common nowadays
It uses a modulation strategy that creates a group of low frequency switches commutating at fundamental line frequency and high frequency switches commutating at carrier frequency to enable the use of hybrid Si/SiC switches
Si IGBTs are used for the low frequency switches while hybrid Si/SiC switches are used for the high frequency switches to reduce the cost and power loss of the inverter
Summary
The renewable energy market based on photovoltaic (PV) energy is rapidly growing [1], [2] and PV generation plants with MW-scale power capability are becoming common nowadays. The three-level T-type inverter topology is typically preferred for lower voltage applications because of its higher power conversion efficiency compared to other three-level inverter topologies, especially for low switching frequencies [5]. This topology is less economically attractive for high voltage applications. The three-level neutral point clamped (NPC) inverter topology is attractive due to its capability to handle higher voltage levels with lower voltage rated semiconductor devices [8], [9]. Like the three-level neutral-point clamped inverter topology, it requires low voltage rated semiconductor devices for high voltage applications It is very attractive solution for high power energy conversion applications. Another benefit of the proposed ANPC inverter system is its cost reduction; the semiconductor device cost of the proposed ANPC inverter system is much lower than an all SiC MOSFET based ANPC inverter system and the mixed Si IGBT and SiC MOSFET based ANPC inverter systems while it is almost comparable with the cost of an all Si IGBT based ANPC inverter system
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