Abstract
This letter presents an X-band power detector in a 0.25- $\mu\text{m}$ SiGe BiCMOS technology which utilizes a novel technique, cascode configuration with diode connected PMOS load that provides high responsivity, high dynamic range and wideband input matching for various input powers. This configuration achieves a dynamic range of 52 dB, which is the highest dynamic range for a single stage X-band power detector to the best of author's knowledge. The total chip area is 0.42 mm2, including pads. Total power consumption is 7.2 mW. Results demonstrate that such a power detector can be used for built-in digital self calibration of X-band front-end circuits.
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