Abstract

A high-density, 5-V-only, 4-Mb CMOS EEPROM with a NAND-structured cell using Fowler-Nordheim tunneling for programming is discussed. The block-page mode is utilized for high-speed programming and easy microprocessor interface. On-chip test circuits for shortening test time and for evaluating cell characteristics yield highly reliable EEPROMs. The NAND EEPROM has many applications for microcomputer systems that require small size and large nonvolatile storage systems with low power consumption. >

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call