A high density FinFET one-time programmable cell with new intra-fin cell isolation for advanced system on chip applications

Abstract

A fully CMOS compatible one-time programmable (OTP) cell with a novel intra-fin cell isolation (IFCI) structure on a FinFET CMOS process has been proposed. The IFCI OTP cell utilizes the field-enhanced dielectric breakdown at fin corners to perform a fast and low-voltage program operation. Moreover, an ultrasmall intra-fin cell-to-cell isolation is firstly introduced to markedly shrink the cell size by eliminating the area-consuming spacing of fin-to-fin isolation. The IFCI FinFET OTP with fast program speed, excellent read disturb immunity, and reliable data retention is a promising solution for logic nonvolatile memory (NVM) technology in advanced CMOS nodes.